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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2525 DESCRIPTION *With MT-200 package *Complement to type 2SA1075 *Excellent safe operating area *Ultra fast switching speed APPLICATIONS *Suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 7 12 120 150 -65~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; RBE= IC=50A; IE=0 IE=50A; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=120V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCB=10V,f=1MHz IE=0; VCB=10V;f=1MHz 60 40 50 80 MIN 120 120 7 2SC2525 TYP. MAX UNIT V V V 0.7 1.25 1.8 1.7 50 50 200 V V A A MHz 300 pF 180 Switching times tr ts tf Rise time Storage time Fall time IC=7.5A; RL=4 IB1=-IB2=0.75A 0.3 1.3 0.2 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2525 Fig.2 Outline dimensions 3 |
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